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FCD9N60NTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCD9N60NTM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4647
- Description: FCD9N60NTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | FCD9N60 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 92.6W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 92.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 385m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 10V |
| Rise Time | 9.6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 11.5 ns |
| Turn-Off Delay Time | 28.7 ns |
| Continuous Drain Current (ID) | 9A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 27A |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | SupreMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
FCD9N60NTM Description
The FCD9N60NTM is an N-channel SuperFET? high voltage super-junction MOSFET employing a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp ON-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCD9N60NTM Features
RDS(on) = 330m? ( Typ.) @ VGS = 10V, ID = 4.5A
Ultra low gate charge ( Typ. Qg = 17.8nC )
Low effective output capacitance ( Typ. Coss.eff = 122pF )
100% avalanche tested
RoHS compliant
FCD9N60NTM Applications
PFC
Server/telecom power
FPD TV power
ATX power
Industrial power applications
