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FCD850N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCD850N80Z
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 226
- Description: FCD850N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | 260.37mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | SuperFET® II |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 245 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 75W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 600μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1315pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.5 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 800V |
| RoHS Status | ROHS3 Compliant |
FCD850N80Z Description
A brand-new high voltage super-junction (SJ) MOSFET family called SuperFET? II MOSFET uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. With this technology, conduction loss is minimized while switching performance, dv/dt rate, and avalanche energy are all improved. A 2kV HBM surge stress can also be tolerated thanks to an inbuilt gate-source ESD diode. Because of this, SuperFET II MOSFET is ideal for switching power uses like audio, lighting, laptop adapters, ATX power, and industrial power.
FCD850N80Z Features
Typ. RDS(on) = 710 mΩ(Typ.)
Ultra Low Gate Charge (Typ. Qg = 22 nC)
Low Eoss (Typ. 2.3 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
100% Avalanche Tested
RoHS Compliant
ESD Improved Capability
FCD850N80Z Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
AC-DC Power Supply
LED Lighting
