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ContactFCD380N60E
MOSFET (Metal Oxide) N-Channel Digi-Reel® 380m Ω @ 5A, 10V ±20V 1770pF @ 25V 45nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: ON Semiconductor
- NO: 598-FCD380N60E
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2341
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 380m Ω @ 5A, 10V ±20V 1770pF @ 25V 45nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 380m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Rise Time | 9ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 64 ns |
| Continuous Drain Current (ID) | 10.2A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 650V |
| Avalanche Energy Rating (Eas) | 211.6 mJ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2013 |
| Series | SuperFET® II |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | FCD380N60 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 106W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 106W |
| Case Connection | DRAIN |
FCD380N60E Description
FCD380N60E is an N-Channel SUPERFET? II Power MOSFET manufactured by onsemi. The onsemi FCD380N60E utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. The FCD380N60E is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET FCD380N60E is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCD380N60E Features
650 V at TJ = 150°C
100% Avalanche Tested
Max. RDS(on) = 380 mΩ
Ultra-Low Gate Charge ( Typ. Qg = 34 nC )
Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF )
FCD380N60E Applications
PFC
Server/telecom power
FPD TV power
ATX power
Industrial power applications
