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ContactFCB36N60NTM
FCB36N60NTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCB36N60NTM
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 9632
- Description: FCB36N60NTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.762g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | SupreMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 90MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | FCB36N60 |
| Number of Elements | 1 |
| Power Dissipation-Max | 312W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 312W |
| Turn On Delay Time | 23 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4785pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 36A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 94 ns |
| Continuous Drain Current (ID) | 36A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 11.33mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FCB36N60NTM Description
The FCB36N60NTM is an N-channel SupreMOS high voltage super-junction MOSFET that differs from other SJ MOSFETs using a deep Trench filling method. Lowest Rsp ON-resistance improved switching performance, and ruggedness is provided by this cutting-edge technology and exact process control. For high-frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SupreMOS MOSFETs are appropriate.
FCB36N60NTM Features
100% avalanche tested
RoHS compliant
RDS(on) = 81m? ( Typ.) @ VGS = 10V, ID = 18A
Ultra low gate charge ( Typ. Qg = 86nC )
Low effective output capacitance ( Typ. Coss.eff = 361pF )
FCB36N60NTM Applications
Solar Inverter
AC-DC Power Supply
Industrial
Power Management
Communications & Networking
Alternative Energy
