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FCA76N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCA76N60N
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 7559
- Description: FCA76N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 12385pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 76A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 285nC @ 10V |
| Rise Time | 24ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 235 ns |
| Continuous Drain Current (ID) | 76A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 228A |
| Avalanche Energy Rating (Eas) | 8022 mJ |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | SupreMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 543W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 543W |
| Case Connection | DRAIN |
| Turn On Delay Time | 34 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 36m Ω @ 38A, 10V |
After the high voltage super-junction (SJ) technology being developed, FCA76N60N SupreMOS? MOSFET came to being based on a deep trench filling process. This process is what differenciates it from the conventional SJ MOSFETs. Based on the sophisticated technology and process, FCA76N60N is especially tailored to provide lowest Rsp on-resistance, reliable performance, and superior ruggedness. It features small drive power, fast switching, large on-state voltage drop, and small current-carrying sensity. FCA76N60N SupreMOS? MOSFET is ideally suitable for various applications, including solar inverters, AC-DC power supply, etc.
FCA76N60N Features
Typical rise and fall time of 24 ns and 32 ns, respectively
Typical turn-on and turn-off delay time of 34 ns and 235 ns, respectively
Operational temperature of -55 °C to 150 °C
High avalanche energy strength
Available in TO-3PN-3 package
FCA76N60N Applications
PFC (power factor correction)
Server/telecom power
FPD (flat panel display) TV power
ATX (advanced technology extended) power
Industrial power applications
