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FCA36N60NF
  • FCA36N60NF

FCA36N60NF

FCA36N60NF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCA36N60NF
  • Package: TO-3P-3, SC-65-3
  • Datasheet: pdf
  • Stock: 6773
  • Description: FCA36N60NF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 39 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series FRFET®, SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 312W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4245pF @ 100V
Current - Continuous Drain (Id) @ 25°C 34.9A Tc
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 34.9A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.095Ohm
Drain to Source Breakdown Voltage 600V
Nominal Vgs 3.7 V
Height 20.1mm
Length 16.2mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

FCA36N60NF Description


The SupreMOS MOSFET is On Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Supre-MOS FRFET MOSFET's optimized body diode reverse recovery performance can remove additional component and improve system reliability.



FCA36N60NF Features


  • RDS(on) = 80 mΩ (Typ.) @ VGS = 10 V, lD = 18 A

  • UIltra Low Gate Charge (Typ. Qg = 86 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF)

  • 100% Avalanche Tested

  • RoHS Compliant

  • No SVHC

  • Turn-Off Delay Time: 92 ns

  • Power Dissipation-Max: 312W Tc



FCA36N60NF Applications


  • Solar Inverter

  • AC-DC Power Supply

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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