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ContactFCA35N60
FCA35N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCA35N60
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 9458
- Description: FCA35N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Turn On Delay Time | 34 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 98m Ω @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6640pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 181nC @ 10V |
| Rise Time | 120ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 73 ns |
| Turn-Off Delay Time | 105 ns |
| Continuous Drain Current (ID) | 35A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.098Ohm |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 105A |
| Avalanche Energy Rating (Eas) | 1455 mJ |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | SuperFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 312.5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 312.5W |
FCA35N60 Description
FCA35N60 N-channel MOSFET is based on an original, unique vertical structure. FCA35N60 MOSFET results in a dramatic reduction in the on-resistance. FCA35N60 ON Semiconductor is utilized in the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCA35N60 Features
100% Avalanche Tested
Low effective output capacitance
Typ. RDS(on) = 79m|?
Ultra low gate charge
650V @TJ = 150??C
FCA35N60 Applications
Industrial power applications
Server/telecom power
FPD TV power
ATX power
PFC
