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ContactFCA20N60F
FCA20N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCA20N60F
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 8145
- Description: FCA20N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | SuperFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | FCA20N60 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 208W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 208W |
| Turn On Delay Time | 62 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Rise Time | 140ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 230 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Avalanche Energy Rating (Eas) | 690 mJ |
| Height | 20.1mm |
| Length | 16.2mm |
| Width | 5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The FCA20N60F is a 600 V, 20 A, 190 m N-Channel SuperFET? FRFET? MOSFET. Fairchild Semiconductor's SuperFET? MOSFET family is the first generation of high voltage super-junction (SJ) MOSFETs that use charge balance technology for remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET MOSFETs are well suited to switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFET FRFET? MOSFETs can eliminate extraneous components and improve system reliability.
Features
? Ultra Low Gate Charge (Typ. Qg = 75 nC )
? Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
? 100% Avalanche Tested
? RoHS Compliant
? 650 V @ TJ = 150°C
? Typ. RDS(on) = 150 m?
? Fast Recovery Type (Typ. Trr = 160 ns )
Applications
? LCD / LED / PDP TV
? Solar Inverter
? AC-DC Power Supply
? Automotive electronics
? Switching devices
