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ContactEPC2016C
GaNFET (Gallium Nitride) N-Channel Tape & Reel (TR) 16mOhm @ 11A, 5V +6V, -4V 420pF @ 50V 4.5nC @ 5V 100V Die
- Manufacturer: EPC
- NO: 257-EPC2016C
- Package: Die
- Datasheet:
- Stock: 4521
- Description: GaNFET (Gallium Nitride) N-Channel Tape & Reel (TR) 16mOhm @ 11A, 5V +6V, -4V 420pF @ 50V 4.5nC @ 5V 100V Die (Kg)
- Delivery:
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In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | eGaN® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Technology | GaNFET (Gallium Nitride) |
| Number of Channels | 1 |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 18A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 6V |
| Drain to Source Breakdown Voltage | 100V |
| Input Capacitance | 420pF |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 12mOhm |
| Rds On Max | 16 mΩ |
| Height | 815μm |
| RoHS Status | ROHS3 Compliant |
