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ContactDMS2120LFWB-7
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 95m Ω @ 2.8A, 4.5V ±12V 632pF @ 10V 20V 8-VDFN Exposed Pad
- Manufacturer: Diodes Incorporated
- NO: 233-DMS2120LFWB-7
- Package: 8-VDFN Exposed Pad
- Datasheet:
- Stock: 6087
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 95m Ω @ 2.8A, 4.5V ±12V 632pF @ 10V 20V 8-VDFN Exposed Pad (Kg)
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| Parameters | |
|---|---|
| Number of Channels | 1 |
| Power Dissipation-Max | 1.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A Ta |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Continuous Drain Current (ID) | 2.9A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.095Ohm |
| Drain to Source Breakdown Voltage | -20V |
| FET Feature | Schottky Diode (Isolated) |
| Height | 780μm |
| Length | 3mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 8 |
| Weight | 37.393021mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
DMS2120LFWB-7 Overview
The maximum input capacitance of this device is 632pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain current is the maximum continuous current the device can conduct, and this device has 2.9A continuous drain current (ID).In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.
DMS2120LFWB-7 Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)
DMS2120LFWB-7 Applications
There are a lot of Diodes Incorporated DMS2120LFWB-7 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- LCD/LED TV
- Solar Inverter
- Battery Protection Circuit
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Load switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Consumer Appliances
- Micro Solar Inverter
- Motor control
