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ContactDMN3032LE-13
MOSFET N-CH 30V 5.6A SOT223
- Manufacturer: Diodes Incorporated
- NO: 233-DMN3032LE-13
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 2081
- Description: MOSFET N-CH 30V 5.6A SOT223(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Supplier Device Package | SOT-223 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | DMN3032 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Turn On Delay Time | 2.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 498pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
| Rise Time | 3.9ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 1.9 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 5.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 498pF |
| Drain to Source Resistance | 35mOhm |
| Rds On Max | 29 mΩ |
| Height | 1.65mm |
| Length | 6.55mm |
| Width | 3.55mm |
| RoHS Status | ROHS3 Compliant |
