DMN26D0UFB4-7

MOSFET (Metal Oxide) N-Channel Digi-Reel® 3 Ω @ 100mA, 4.5V ±10V 14.1pF @ 15V 20V 3-XFDFN


  • Manufacturer: Diodes Incorporated
  • NO: 233-DMN26D0UFB4-7
  • Package: 3-XFDFN
  • Datasheet: pdf
  • Stock: 1879
  • Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 3 Ω @ 100mA, 4.5V ±10V 14.1pF @ 15V 20V 3-XFDFN (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2017
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14.1pF @ 15V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Rise Time 7.9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 15.2 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 240mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.24A
DS Breakdown Voltage-Min 20V
Height 350μm
Length 1.05mm
Width 650μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMN26D0UFB4-7 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 14.1pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 240mA.Its drain current is 0.24A, and it is the maximum continuous current the device can conduct.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 13.4 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.To maintain normal operation, the DS breakdown voltage should be kept above 20V.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.

DMN26D0UFB4-7 Features


a continuous drain current (ID) of 240mA
the turn-off delay time is 13.4 ns
a 20V drain to source voltage (Vdss)

DMN26D0UFB4-7 Applications


There are a lot of Diodes Incorporated DMN26D0UFB4-7 applications of single MOSFETs transistors.

  • Solar Inverter
  • LCD/LED/ PDP TV Lighting
  • Motor drives and Uninterruptible Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • Micro Solar Inverter
  • Lighting, Server, Telecom and UPS.
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • DC/DC converters
  • Motor control
  • General Purpose Interfacing Switch

In Stock

Please send RFQ , we will respond immediately.