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MOSFET (Metal Oxide) N-Channel Digi-Reel® 21.5m Ω @ 10A, 10V ±25V 493.5pF @ 15V 10.2nC @ 10V 8-SOIC (0.154, 3.90mm Width)
- Manufacturer: Diodes Incorporated
- NO: 233-DMG4496SSS-13
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 294
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 21.5m Ω @ 10A, 10V ±25V 493.5pF @ 15V 10.2nC @ 10V 8-SOIC (0.154, 3.90mm Width) (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 73.992255mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.42W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.42W |
| Turn On Delay Time | 4.76 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 21.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 493.5pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10.2nC @ 10V |
| Rise Time | 3.64ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 4.9 ns |
| Turn-Off Delay Time | 19.5 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Height | 1.5mm |
| Length | 4.95mm |
| Width | 3.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
DMG4496SSS-13 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 493.5pF @ 15V.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19.5 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.76 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
DMG4496SSS-13 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19.5 ns
based on its rated peak drain current 60A.
DMG4496SSS-13 Applications
There are a lot of Diodes Incorporated DMG4496SSS-13 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Industrial Power Supplies
- Synchronous Rectification
- Power Management Functions
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
- Load switching
- Lighting
- Uninterruptible Power Supply
- LCD/LED TV
