DMG1012UW-7

DMG1012UW-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-DMG1012UW-7
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 4675
  • Description: DMG1012UW-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 290mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 290mW
Turn On Delay Time 5.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Rise Time 7.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 12.3 ns
Turn-Off Delay Time 26.7 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 20V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMG1012UW-7 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.There is no drain current on this device since the maximum continuous current it can conduct is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.1 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 6V.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

DMG1012UW-7 Features


a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns

DMG1012UW-7 Applications


There are a lot of Diodes Incorporated DMG1012UW-7 applications of single MOSFETs transistors.

  • DC/DC converters
  • Lighting
  • Motor drives and Uninterruptible Power Supplies
  • Synchronous Rectification
  • Motor control
  • Power Tools
  • DC-to-DC converters
  • Consumer Appliances
  • Industrial Power Supplies
  • Battery Protection Circuit

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