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CSD25483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD25483F4
- Package: 3-XFDFN
- Datasheet:
- Stock: 5051
- Description: CSD25483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD25483 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | -0.95 |
| Turn On Delay Time | 4.3 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 205m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 198pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.959nC @ 4.5V |
| Rise Time | 3.7ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 17.4 ns |
| Continuous Drain Current (ID) | 1.6A |
| Gate to Source Voltage (Vgs) | -12V |
| Drain to Source Breakdown Voltage | -20V |
| Length | 1.035mm |
| Width | 635μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
CSD25483F4 Description
The design and optimization of this 210-m, 20-V P-Channel FemtoFETTM MOSFET minimizes the footprint in numerous handheld and mobile applications. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%. This product can be applied in a variety of circumstances and is meant for general use.
CSD25483F4 Features
? very little on-resistance
? very low Qg and Qgd
? Significant drain current operating
? Extremely tiny footprint (0402 case size) - 1.0 mm × 0.6 mm
? Extremely low-profile
CSD25483F4 Applications
? Designed with load switch applications in mind.
? Designed with general switching applications in mind
? Battery-related uses
? Mobile and handheld applications
