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ContactCSD25402Q3AT
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 8.9m Ω @ 10A, 4.5V ±12V 1790pF @ 10V 9.7nC @ 4.5V 20V 8-PowerVDFN
- Manufacturer: Texas Instruments
- NO: 815-CSD25402Q3AT
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 500
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 8.9m Ω @ 10A, 4.5V ±12V 1790pF @ 10V 9.7nC @ 4.5V 20V 8-PowerVDFN (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Reach Compliance Code | compliant |
| JESD-30 Code | R-PDSO-F8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 69W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.9m Ω @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.15V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1790pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 15A Ta 76A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Drain Current-Max (Abs) (ID) | 35A |
| Drain-source On Resistance-Max | 0.0159Ohm |
| Pulsed Drain Current-Max (IDM) | 148A |
| DS Breakdown Voltage-Min | 20V |
| RoHS Status | RoHS Compliant |
