CSD22204WT

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 9.9m Ω @ 2A, 4.5V -6V 1130pF @ 4V 24.6nC @ 4.5V 8V 9-UFBGA, DSBGA


  • Manufacturer: Texas Instruments
  • NO: 815-CSD22204WT
  • Package: 9-UFBGA, DSBGA
  • Datasheet: pdf
  • Stock: 246
  • Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 9.9m Ω @ 2A, 4.5V -6V 1130pF @ 4V 24.6nC @ 4.5V 8V 9-UFBGA, DSBGA (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 9-UFBGA, DSBGA
Number of Pins 9
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD22204
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 58 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.9m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 4V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 24.6nC @ 4.5V
Rise Time 600ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) -6V
Fall Time (Typ) 2.29 μs
Turn-Off Delay Time 3.45 μs
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 8V
Feedback Cap-Max (Crss) 265 pF
Height 625μm
Length 1.75mm
Width 1.75mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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