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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m Ω @ 100A, 10V ±20V 12000pF @ 50V 153nC @ 10V 100V TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Manufacturer: Texas Instruments
- NO: 815-CSD19536KTTT
- Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Datasheet:
- Stock: 4694
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m Ω @ 100A, 10V ±20V 12000pF @ 50V 153nC @ 10V 100V TO-263-4, D2Pak (3 Leads + Tab), TO-263AA (Kg)
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In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 2 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD19536 |
| Number of Elements | 1 |
| Power Dissipation-Max | 375W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 200A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
| Rise Time | 8ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 200A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0028Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 806 mJ |
| Feedback Cap-Max (Crss) | 61 pF |
| Height | 4.83mm |
| Length | 10.18mm |
| Width | 8.41mm |
| Thickness | 4.44mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
