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CSD19534Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD19534Q5A
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7091
- Description: CSD19534Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD19534 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.2W Ta 63W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15.1m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 50A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 14ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Avalanche Energy Rating (Eas) | 55 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Feedback Cap-Max (Crss) | 7.4 pF |
| Height | 1.1mm |
| Length | 4.9mm |
| Width | 6mm |
| Thickness | 1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD19534Q5A Description
This CSD19534Q5A power MOSFET can be used for amplification in your circuit. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
CSD19534Q5A Features
Halogen Free
Avalanche Rated
RoHS Compliant
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free Terminal Plating
SON 5 mm × 6 mm Plastic Package
Applications
Motor Control
Primary Side Telecom
