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CSD19531Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD19531Q5A
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 3856
- Description: CSD19531Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.4m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3870pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 5.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.2 ns |
| Turn-Off Delay Time | 18.4 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 2.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 337A |
| Length | 4.9mm |
| Width | 6mm |
| Thickness | 1mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD19531 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.3W Ta 125W Tc |
CSD19531Q5A Description
CSD19531Q5A N-Channel MOSFET is designed for various applications, including switched-mode power supplies, active power factor correction, and electronic lamp ballasts. CSD19531Q5A MOSFET is ideally suitable for reducing on-state resistance and providing superior switching performance as well as high avalanche energy strength. CSD19531Q5A circuit is ideally suitable for high-voltage applications where current is not an important factor.
CSD19531Q5A Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
CSD19531Q5A Applications
Primary Side Telecom
Secondary Side Synchronous Rectifier
Motor Control
