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CSD18533KCS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD18533KCS
- Package: TO-220-3
- Datasheet:
- Stock: 4741
- Description: CSD18533KCS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| DS Breakdown Voltage-Min | 60V |
| Nominal Vgs | 1.9 V |
| Height | 4.7mm |
| Length | 10.16mm |
| Width | 8.7mm |
| Thickness | 4.58mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD18533 |
| Number of Elements | 1 |
| Power Dissipation-Max | 192W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 160W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3025pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 72A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Rise Time | 4.8ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.2 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.009Ohm |
CSD18533KCS Description
This NexFETTM power MOSFET with a 5.0 mQ and a 60 V TO-220 voltage rating is designed to reduce losses in power conversion applications. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance. This product is intended for broad use and can be used to a wide range of scenarios.
CSD18533KCS Features
?Extremely Low Qg and Qgd
?Low Thermal Resista nee nee nee nee nee n
?Avalanche-Resistant
?Intelligence Level
?Pb-Free Terminal Plating is a type of plating that is free of lead.
?RoHS (Restriction of Hazardous Substances) Compliant
?Free of halogens
CSD18533KCS Applications
?Conversion from DC to DC
?Synchronous Rectifier on the Secondary Side
?Motor Control is a term that refers to the ability to control
