CSD18513Q5AT

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.3m Ω @ 19A, 10V ±20V 4280pF @ 20V 61nC @ 10V 40V 8-PowerTDFN


  • Manufacturer: Texas Instruments
  • NO: 815-CSD18513Q5AT
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 12030
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.3m Ω @ 19A, 10V ±20V 4280pF @ 20V 61nC @ 10V 40V 8-PowerTDFN (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18513
Number of Elements 1
Power Dissipation-Max 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 20V
Current - Continuous Drain (Id) @ 25°C 124A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0053Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 106 mJ
Feedback Cap-Max (Crss) 231 pF
Length 4.9mm
Width 6mm
Thickness 1mm
RoHS Status ROHS3 Compliant

In Stock

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