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CSD17559Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD17559Q5
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 210
- Description: CSD17559Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD17559 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.2W Ta 96W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.15m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 40A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 4.5V |
| Rise Time | 41ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 1.4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Thickness | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD17559Q5 Description
The CSD17559Q5 is a SON NexFETTM power MOSFET with a 30 V, 0.95 mΩ, 5 x 6 mm package designed to minimize losses in synchronous rectification and other power conversion applications.
CSD17559Q5 Features
Extremely Low Resistance
Ultra-L ow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm x 6 mm Plastic Package
CSD17559Q5 Applications
Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications
