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CSD17483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD17483F4
- Package: 3-XFDFN
- Datasheet:
- Stock: 7305
- Description: CSD17483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 5A |
| Height | 350μm |
| Length | 1.035mm |
| Width | 635μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD17483 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 3.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 240m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 4.5V |
| Rise Time | 1.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 10.6 ns |
| Continuous Drain Current (ID) | 1.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.55Ohm |
CSD17483F4T Descriptions
The FemtoFETTM N-channel MOSFET CSD17483F4T is designed and optimized to fit into numerous handheld and mobile applications. This technology is capable of replacing traditional tiny signal MOSFETs while reducing the footprint size by at least 60%. The operating temperature of CSD17483F4T is -55°C~175°C TJ and its maximum power dissipation are 1.15kW. CSD17483F4T has 3 pins and it is available in the TO-274AA packaging way. The Turn-On Delay Time of CSD17483F4T is 63 ns and the Turn-Off Delay Time is 267 ns.
CSD17483F4T Features
Low ON-resistance
Ultra-low Qg and Qgd
Ultra-small footprint
Low profile
Integrated ESD protection diode
Halogen-free
-55 to 150°C Operating junction temperature range
CSD17483F4T Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
