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CSD17309Q3 Trans MOSFET N-CH 30V 20A 8-Pin SON T/R CSD17309Q3 MOSFET 30V N Channel NexFET Power MOSFET
- Manufacturer: Texas Instruments
- NO: 815-CSD17309Q3
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 5879
- Description: CSD17309Q3 Trans MOSFET N-CH 30V 20A 8-Pin SON T/R CSD17309Q3 MOSFET 30V N Channel NexFET Power MOSFET(Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 1.2 V |
| Drain Current-Max (Abs) (ID) | 20A |
| Current - Continuous Drain (Id) @ 25°C | 20A Ta 60A Tc |
| Feedback Cap-Max (Crss) | 56 pF |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
| Vgs (Max) | +10V, -8V |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Length | 3.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Contact Plating | Tin |
| Radiation Hardening | No |
| Number of Pins | 8 |
| Additional Feature | AVALANCHE RATED |
| Package / Case | 8-PowerTDFN |
| REACH SVHC | No SVHC |
| Height | 1.1mm |
| Width | 3.3mm |
| Thickness | 1mm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD17309 |
| Pin Count | 8 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 2.8W |
| Turn On Delay Time | 6.1 ns |
| Threshold Voltage | 1.2V |
| Power Dissipation-Max | 2.8W Ta |
| Continuous Drain Current (ID) | 60A |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 13.2 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.4m Ω @ 18A, 8V |
| Vgs(th) (Max) @ Id | 1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Rise Time | 9.9ns |
| Fall Time (Typ) | 3.6 ns |
| Gate to Source Voltage (Vgs) | 10V |
CSD17309Q3 Describe
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
CSD17309Q3 Describe
• Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3 mm × 3.3 mm Plastic Package
• APPLICATIONS
• Notebook Point of Load
• Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
NexFET Is a trademark of Texas Instruments
