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CSD16570Q5BT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD16570Q5BT
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 533
- Description: CSD16570Q5BT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 24.012046mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD16570 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.2W Ta 195W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 0.59m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
| Rise Time | 43ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 72 ns |
| Turn-Off Delay Time | 156 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 59A |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Length | 5mm |
| Width | 6mm |
| Thickness | 950μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD16570Q5BT Description
The CSD16570Q5BT is a 25 V, 0.49 m, SON 5 x 6 mm NexFETTM power MOSFET developed for ORing and hot-swap applications. It is not intended for switching applications.
CSD16570Q5BT Features
Extremely Low Resistance
Low Qg and Qgd
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
Low Thermal Resistance
Avalanche Rated
SON 5-mm × 6-mm Plastic Package
CSD16570Q5BT Applications
Solid State Relay Switch
DC-DC Conversion
ORing and Hot-Swap Applications
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
