Products
Manufacturer
RFQ
NEWS
ContactCSD16407Q5
CSD16407Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD16407Q5
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7862
- Description: CSD16407Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD16407 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 12.5V |
| Current - Continuous Drain (Id) @ 25°C | 31A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Rise Time | 18.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +16V, -12V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain-source On Resistance-Max | 0.0033Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Dual Supply Voltage | 25V |
| Nominal Vgs | 1.6 V |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Thickness | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
Description
The CSD16407Q5 is an N-Channel NexFET? Power MOSFET. In order to reduce losses in power conversion applications, the NexFETTM power MOSFET was created. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
Avalanche Rated
SON 5-mm × 6-mm Plastic Package
Ultralow Qg and Qgd
Low Thermal Resistance
Wide Bandwidth
Applications
Optimized for Synchronous FET Applications
Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
Power Supplies
DC-to-DC Converters
Low-Voltage Motor Controllers
