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CSD16404Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD16404Q5A
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 9987
- Description: CSD16404Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD16404 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.1m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 12.5V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 81A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| Rise Time | 13.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +16V, -12V |
| Fall Time (Typ) | 4.6 ns |
| Turn-Off Delay Time | 8.4 ns |
| Continuous Drain Current (ID) | 81A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain-source On Resistance-Max | 0.0072Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Dual Supply Voltage | 25V |
| Nominal Vgs | 1.8 V |
| Length | 4.9mm |
| Width | 6mm |
| Thickness | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD16404Q5A DESCRIPTION
The NexFETM power MOSFET has been designed to minimize losses in power conversion applications.
CSD16404Q5A FEATURES
·Ultralow Qg and Qgd
·Low Thermal Resistance Avalanche Rated
Pb Free Terminal Plating·RoHS Compliant Halogen Free
·SON5-mmx6-mm Plastic Package
CSD16404Q5A APPLICATIONS
·Point-of-Load Synchronous Buck Converter
for Applications in NetworkingTelecomand Computing Systems
·Optimized for Control FETApplications
