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CSD16401Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD16401Q5
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7165
- Description: CSD16401Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD16401 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.6m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 12.5V |
| Current - Continuous Drain (Id) @ 25°C | 38A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Rise Time | 30ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +16V, -12V |
| Fall Time (Typ) | 12.7 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain-source On Resistance-Max | 0.0023Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 240A |
| Dual Supply Voltage | 25V |
| Avalanche Energy Rating (Eas) | 500 mJ |
| Nominal Vgs | 1.5 V |
| Feedback Cap-Max (Crss) | 230 pF |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Thickness | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD16401Q5 Description
CSD16401Q5 Power MOSFET was designed specifically to reduce resistance in a hot-swap and ORing applications and is not designed to be used in switching applications. CSD16401Q5 MOSFET is characterized by the following characteristics that it is low-thermal resistance, Avalanche Rated, Lead-Free Halogen-Free, and RoHS Compliant. CSD16401Q5 datasheet is ideal as a Solid State Relay Switch, DC-DC Conversion Secondary Side Synchronous Rectifier isolated Converter Secondary Side Switch as well as Motor Control.
CSD16401Q5 Features
Avalanche Rated
Ultra-Low Resistance
Pb Free Terminal Plating
Low Thermal Resistance
Halogen Free
RoHS Compliant
CSD16401Q5 Applications
Solid State Relay Switch
DC-DC Conversion
Motor Control
Isolated Converter Switch
