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CSD16301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi CSD16301Q2 Single, 29mΩ, 25V, N-Channel NexFET™ Power MOSFET in 2mm x 2mm SON Package
- Manufacturer: Texas Instruments
- NO: 815-CSD16301Q2
- Package: 6-SMD, Flat Leads
- Datasheet:
- Stock: 9580
- Description: CSD16301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi CSD16301Q2 Single, 29mΩ, 25V, N-Channel NexFET™ Power MOSFET in 2mm x 2mm SON Package(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Length | 2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Radiation Hardening | No |
| Number of Pins | 6 |
| Package / Case | 6-SMD, Flat Leads |
| REACH SVHC | No SVHC |
| Height | 800μm |
| Width | 2mm |
| Thickness | 750μm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e4 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD16301 |
| Pin Count | 6 |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 2.3W |
| Turn On Delay Time | 2.7 ns |
| Threshold Voltage | 1.2V |
| Power Dissipation-Max | 2.3W Ta |
| Continuous Drain Current (ID) | 5A |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Drain-source On Resistance-Max | 0.034Ohm |
| Turn-Off Delay Time | 4.1 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 4A, 8V |
| Vgs(th) (Max) @ Id | 1.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Rise Time | 4.4ns |
| Fall Time (Typ) | 1.7 ns |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | 25V |
| Nominal Vgs | 1.2 V |
| Drain Current-Max (Abs) (ID) | 5A |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Pulsed Drain Current-Max (IDM) | 20A |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
| Vgs (Max) | +10V, -8V |
The CSD16301Q2 is a NexFET? N-channel Power MOSFET designed to minimize losses in power conversion and load management applications, and optimized for 5V gate drive applications.The 2-mm×2-mm SON package offers excellent thermal performance for the size of the package.
CSD16301Q2 Features
Ultra-low Qg and Qgd
Low thermal resistance
Halogen-free
Plastic package
-55 to 150°C Operating junction temperature range
CSD16301Q2 Applications
DC-DC Converters
Battery and Load Management Applications
Power Management
Industrial
