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CSD13381F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi
- Manufacturer: Texas Instruments
- NO: 815-CSD13381F4
- Package: 3-XFDFN
- Datasheet:
- Stock: 7534
- Description: CSD13381F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD13381 |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | 0.85 |
| Power Dissipation | 500mW |
| Turn On Delay Time | 3.7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
| Rise Time | 1.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Fall Time (Typ) | 3.8 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 2.1A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 12V |
| Pulsed Drain Current-Max (IDM) | 7A |
| Length | 1.035mm |
| Width | 635μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
CSD13381F4 Description
This 140m Ω, 12V N-channel FemtoFET floor MOSFET technology CSD13381F4 is designed and optimized to minimize footprint in many handheld and mobile applications. This technology can replace the standard small signal MOSFET and reduce the footprint by at least 60%.
CSD13381F4 Features
? Low on-resistance
? Low Qg and Qgd
? Low threshold voltage
? Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
? Ultra-low profile
– Maximum height: 0.36-mm
? Integrated ESD protection diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
? Lead and halogen free
? RoHS compliant
CSD13381F4 Applications
? Optimized for load switch applications
? Optimized for general purpose switching applications
? Single-cell battery applications
? Handheld and mobile applications
