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SiCFET (Silicon Carbide) N-Channel Tube 90mOhm @ 20A, 15V +19V, -8V 1350pF @ 1000V 54nC @ 15V 1200V TO-247-3
- Manufacturer: Cree/Wolfspeed
- NO: 163-C3M0075120D
- Package: TO-247-3
- Datasheet:
- Stock: 610
- Description: SiCFET (Silicon Carbide) N-Channel Tube 90mOhm @ 20A, 15V +19V, -8V 1350pF @ 1000V 54nC @ 15V 1200V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | C3M™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation-Max | 113.6W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
