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SiCFET (Silicon Carbide) N-Channel Tube 78mOhm @ 20A, 15V +19V, -8V 660pF @ 600V 35nC @ 15V 1000V TO-247-4
- Manufacturer: Cree/Wolfspeed
- NO: 163-C3M0065100K
- Package: TO-247-4
- Datasheet:
- Stock: 12035
- Description: SiCFET (Silicon Carbide) N-Channel Tube 78mOhm @ 20A, 15V +19V, -8V 660pF @ 600V 35nC @ 15V 1000V TO-247-4 (Kg)
- Delivery:
- Payment:
In Stock
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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4L |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2016 |
| Series | C3M™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | SiCFET (Silicon Carbide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 113.5W Tc |
| Power Dissipation | 113.5W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 600V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 15V |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 1kV |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 65mOhm |
| Height | 5.21mm |
| RoHS Status | RoHS Compliant |
