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ContactC2M0280120D
SiCFET (Silicon Carbide) N-Channel Tube 370m Ω @ 6A, 20V +25V, -10V 259pF @ 1000V 20.4nC @ 20V 1200V TO-247-3
- Manufacturer: Cree/Wolfspeed
- NO: 163-C2M0280120D
- Package: TO-247-3
- Datasheet:
- Stock: 8469
- Description: SiCFET (Silicon Carbide) N-Channel Tube 370m Ω @ 6A, 20V +25V, -10V 259pF @ 1000V 20.4nC @ 20V 1200V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | Z-FET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation-Max | 62.5W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 370m Ω @ 6A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1.25mA (Typ) |
| Input Capacitance (Ciss) (Max) @ Vds | 259pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 2.8V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
