C2M0160120D

SiCFET (Silicon Carbide) N-Channel Tube 196mOhm @ 10A, 20V +25V, -10V 527pF @ 800V 32.6nC @ 20V 1200V TO-247-3


  • Manufacturer: Cree/Wolfspeed
  • NO: 163-C2M0160120D
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 3867
  • Description: SiCFET (Silicon Carbide) N-Channel Tube 196mOhm @ 10A, 20V +25V, -10V 527pF @ 800V 32.6nC @ 20V 1200V TO-247-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Z-FET™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 196mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 2.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 527pF @ 800V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 20V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Evaluation Kit Yes
Continuous Drain Current (ID) 19A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 527pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 160mOhm
Rds On Max 196 mΩ
Height 25.5mm
Length 16.13mm
Width 5.21mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

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