C2M0080120D

SiCFET (Silicon Carbide) N-Channel Bulk 98mOhm @ 20A, 20V +25V, -10V 950pF @ 1000V 62nC @ 5V 1200V TO-247-3


  • Manufacturer: Cree/Wolfspeed
  • NO: 163-C2M0080120D
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 6740
  • Description: SiCFET (Silicon Carbide) N-Channel Bulk 98mOhm @ 20A, 20V +25V, -10V 950pF @ 1000V 62nC @ 5V 1200V TO-247-3 (Kg)

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  • Delivery: Delivery
  • Payment: payment

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series C2M™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 192W Tc
Element Configuration Single
Power Dissipation 208W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Turn-Off Delay Time 23.2 ns
Continuous Drain Current (ID) 31.6A
Threshold Voltage 3.2V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 950pF
Drain to Source Resistance 80mOhm
Rds On Max 98 mΩ
Nominal Vgs 1.7 V
Height 21.1mm
Length 16.13mm
Width 5.21mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.