BVSS138LT3G

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 Ω @ 200mA, 5V ±20V 50pF @ 25V 50V TO-236-3, SC-59, SOT-23-3


  • Manufacturer: ON Semiconductor
  • NO: 598-BVSS138LT3G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 11730
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 Ω @ 200mA, 5V ±20V 50pF @ 25V 50V TO-236-3, SC-59, SOT-23-3 (Kg)

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SPECIFICATIONS

Parameters
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drain to Source Voltage (Vdss) 50V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.2A
DS Breakdown Voltage-Min 50V
Feedback Cap-Max (Crss) 5 pF
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 225mW Ta

In Stock

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