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MOSFET (Metal Oxide) N-Channel Tube 40V TO-262-3 Long Leads, I2Pak, TO-262AA
- Manufacturer: NXP USA Inc.
- NO: 318-BUK9E1R9-40E,127
- Package: TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet:
- Stock: 11352
- Description: MOSFET (Metal Oxide) N-Channel Tube 40V TO-262-3 Long Leads, I2Pak, TO-262AA (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Drain to Source Voltage (Vdss) | 40V |
| Drain Current-Max (Abs) (ID) | 120A |
| Drain-source On Resistance-Max | 0.00193Ohm |
| Pulsed Drain Current-Max (IDM) | 1228A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 1008 mJ |
| Power Dissipation-Max (Abs) | 349W |
| RoHS Status | ROHS3 Compliant |
