BTS282ZE3180AATMA2

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.5mOhm @ 36A, 10V ±20V 4800pF @ 25V 232nC @ 10V 49V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA


  • Manufacturer: Infineon Technologies
  • NO: 376-BTS282ZE3180AATMA2
  • Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
  • Datasheet: pdf
  • Stock: 14206
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.5mOhm @ 36A, 10V ±20V 4800pF @ 25V 232nC @ 10V 49V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA (Kg)

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  • Payment: payment

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package PG-TO263-7-1
Weight 1.59999g
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TEMPFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Output Voltage 49V
Number of Channels 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 240μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V
Rise Time 37ns
Drain to Source Voltage (Vdss) 49V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 49V
Drain to Source Breakdown Voltage 49V
Input Capacitance 4.8nF
FET Feature Temperature Sensing Diode
Drain to Source Resistance 6.5mOhm
Rds On Max 6.5 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

In Stock

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