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BSZ520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ520N15NS3GATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 1540
- Description: BSZ520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 57W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 57W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 52m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 35μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 21A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 21A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 150V |
| Drain-source On Resistance-Max | 0.052Ohm |
| Avalanche Energy Rating (Eas) | 60 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
BSZ520N15NS3GATMA1 Description
The CoolMOS, OptiMOS, and Strong IRFET families are among the several MOSFET devices offered by Infineon. They provide best-in-class performance, resulting in increased efficiency, power density, and cost effectiveness. AEC-Q101 industry standards Automotive approved MOSFETs benefit designs needing high quality and additional protection features.
BSZ520N15NS3GATMA1 Features
Pin Count: 8
Maximum Drain Source Resistance: 52 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage: 4V
Minimum Gate Threshold Voltage: 2V
Maximum Power Dissipation: 57 W
Transistor Configuration Single
Maximum Gate Source Voltage: -20 V, +20 V
Length: 3.4mm
BSZ520N15NS3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
