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ContactBSZ440N10NS3GATMA1
BSZ440N10NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ440N10NS3GATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 845
- Description: BSZ440N10NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Drain-source On Resistance-Max | 0.044Ohm |
| Pulsed Drain Current-Max (IDM) | 72A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 29W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 29W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 44m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 12μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A Ta 18A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 10V |
| Rise Time | 1.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 9.1 ns |
| Continuous Drain Current (ID) | 5.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
BSZ440N10NS3GATMA1 Description
The BSZ440N10NS3GATMA1 is an OptiMOS? N-channel Power MOSFET offering superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSZ440N10NS3GATMA1 is in the TSDSON-8 package with 29W power dissipation.
BSZ440N10NS3GATMA1 Features
Very low gate charge for high frequency applications
Optimized for dc-dc conversion
N-channel, normal level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
150°C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21
BSZ440N10NS3GATMA1 Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
