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BSZ110N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ110N08NS5ATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 4689
- Description: BSZ110N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 22μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 10V |
| Rise Time | 3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 80V |
| Drain to Source Breakdown Voltage | 80V |
| Avalanche Energy Rating (Eas) | 40 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
BSZ110N08NS5ATMA1 Description
BSZ110N08NS5ATMA1 is an 80v OptiMOS? 5 power MOSFET especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the Infineon BSZ110N08NS5ATMA1 can also be utilized in other industrial applications such as solar, low voltage drives, and adapter. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSZ110N08NS5ATMA1 is in the TSDSON-8 package with 50W power dissipation.
BSZ110N08NS5ATMA1 Features
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
RDS(on) reduction of up to 43 % from the previous generation
BSZ110N08NS5ATMA1 Applications
Telecom
Server
Solar
Low voltage drives
Adapter
