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BSZ097N10NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ097N10NS5ATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 6993
- Description: BSZ097N10NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.1W Ta 69W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.7m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 36μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 8A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.0097Ohm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
BSZ097N10NS5ATMA1 Description
Infineon Technologies' CoolMOSTM 7th generation platform is a ground-breaking high-voltage power MOSFET technology based on the superjunction (SJ) principle. The CoolMOSTM P7 series replaces the CoolMOSTM P6 series, which works at 600V. It combines the benefits of a fast switching SJ MOSFET with outstanding ease of use, including reduced ringing, superior body diode durability against hard commutation, and great ESD performance. Due to extremely low switching and conduction losses, switching applications are also more efficient, smaller, and cooler.
BSZ097N10NS5ATMA1 Features
?Perfect for switching at high frequencies
?Technology for DC/DC converters has been improved.
?Excellent gate charge product x Roson> (FOM)
?Logic level N-channel
?Avalanche-proofed to the nth degree
?Plating is devoid of lead and RoHS compliant.
?Qualified for target applications according to JEDEC1'
?According to IEC61249-2-21, it is halogen-free.
BSZ097N10NS5ATMA1 Applications
Switching applications
