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| Parameters | |
|---|---|
| Power Dissipation | 69W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 105μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4785pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 57.5nC @ 10V |
| Rise Time | 46ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 13.5A |
| Threshold Voltage | -2.5V |
| Gate to Source Voltage (Vgs) | 25V |
| Max Dual Supply Voltage | -30V |
| Drain to Source Breakdown Voltage | -30V |
| Height | 1.1mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ESD PROTECTED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.1W Ta 69W Tc |
| Operating Mode | ENHANCEMENT MODE |
P-channel power MOSFETs are part of Infineon's extremely unique OptiMOSTM family. In essential parameters for power system design, such as on-state resistance and figure of merit characteristics, BSZ086P03NS3EGATMA1 constantly meets the highest quality and performance expectations.
single P-Channel in S3O8
Qualified according to JEDEC1) for target applications
150 °C operating temperature
V GS=25 V, especially suited for notebook applications
Pb-free; RoHS compliant
ESD protected
Halogen-free according to IEC61249-2-21
Enhancement mode
Normal level, logic level, or super logic level
Avalanche rated
Pb-free lead plating; RoHS compliant
battery management
load switching
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
Please send RFQ , we will respond immediately.