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| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29.5nC @ 10V |
| Rise Time | 4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 80V |
| Drain-source On Resistance-Max | 0.0075Ohm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 69W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 69W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 36μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 40V |
BSZ075N08NS5ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 80V. The operating temperature of BSZ075N08NS5ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 69W Tc. BSZ075N08NS5ATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of BSZ075N08NS5ATMA1 is 10 ns and its Turn-Off Delay Time is 19 ns.
Ideal for high frequency switching and sync.rec.
Optimized technology for DC/DC converters
Excellent gate charge xRDS (on)product(FOM)
Very low on-resistance RDS(on)
N-channel,normal level
100% avalanche tested
Pb-free plating;RoHS compliant
Qualified according to JEDEC1 for target applications
Halogen-free according to IEC61249-2-21
Higher solder joint reliability with enlarged source interconnection
Power Management
Consumer Electronics
Portable Devices
Industrial
Please send RFQ , we will respond immediately.