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BSZ060NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ060NE2LSATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 4862
- Description: BSZ060NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.1W Ta 26W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 2.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 10V |
| Rise Time | 2.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 1.8 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 25V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
BSZ060NE2LSATMA1 Description
With this Infineon Technologies BSZ060NE2LSATMA1 power MOSFET, you can boost the current or voltage in your circuit. It can dissipate up to 2100 mW of power. This product will be sent in tape and reel packaging to allow for optimal component mounting. In enhancement mode, this N channel MOSFET transistor works. Optimos technology is used in this device. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.
BSZ060NE2LSATMA1 Features
Low FOMSW for High-Frequency SMPS
Very Low FOMQOSS for High-Frequency SMPS
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on) @ V GS=4.5 V
Optimized for high-performance Buck converter (Server, VGA)
BSZ060NE2LSATMA1 Applications
Synchronous rectification
On board power for server
High power density point of load converters
Power managment for high performance computing
