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BSZ042N06NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ042N06NSATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 8844
- Description: BSZ042N06NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Reach Compliance Code | not_compliant |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.1W Ta 69W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 36μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 17A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0042Ohm |
| Feedback Cap-Max (Crss) | 44 pF |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
BSZ042N06NSATMA1 Description
The OptiMOSTM N-channel Power MOSFET BSZ042N06NS is designed for synchronous rectification in switched-mode power supplies (SMPS). Furthermore, these devices are ideal for a wide range of industrial applications, such as solar micro inverters and quick switching DC-to-DC converters.
BSZ042N06NSATMA1 Features
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
MSL1 rated
40% lower RDS (ON) than alternative devices
40% Improvement of FOM over similar devices
100% Avalanche tested
Superior thermal resistance
Qualified according to JEDEC for target applications
BSZ042N06NSATMA1 Applications
Power Management
Motor Drive & Control
Industrial
Communications & Networking
Computers & Computer Peripherals
Consumer Electronics
Portable Devices
