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ContactBSZ036NE2LSATMA1
BSZ036NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSZ036NE2LSATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 6596
- Description: BSZ036NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Rise Time | 2.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2.2 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 25V |
| Avalanche Energy Rating (Eas) | 40 mJ |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.1W Ta 37W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 3.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
Description
The BSZ036NE2LSATMA1 is an OptiMOSTM Power-MOSFET. Infineon establishes new benchmarks in power density and energy efficiency for discrete power MOSFETs and systems in packages with the OptiMOSTM 25V product family. For the demanding needs of voltage regulator solutions in servers, datacom, and telecom applications, OptiMOSTM 25V is the optimum option because of its extremely low gate and output charge, lowest on-state resistance, and small footprint packages, readily available in half-bridge form (power stage 5x6).
Features
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on) @ V GS=4.5 V
100% avalanche tested
Superior thermal resistance
Optimized for high-performance Buck converter (Server, VGA)
Very Low FOMQOSS for High-Frequency SMPS
Low FOMSW for High-Frequency SMPS
Applications
DC-DC
VRD/VRM
LED
Motor control
Onboard charger
Mainboard
Notebook
