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MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 10 Ω @ 100mA, 5V ±20V 30pF @ 5V TO-236-3, SC-59, SOT-23-3
- Manufacturer: ON Semiconductor
- NO: 598-BSS84LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3230
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 10 Ω @ 100mA, 5V ±20V 30pF @ 5V TO-236-3, SC-59, SOT-23-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 10Ohm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -130mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 225mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225mW |
| Turn On Delay Time | 3.6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 100mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 130mA Ta |
| Rise Time | 1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 1 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 130mA |
| Threshold Voltage | -2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 50V |
| Nominal Vgs | 2 V |
| Height | 1.016mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications. The ON Semiconductor MOSFET is a P channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.?
BSS84LT1G Features
? SOT?23 Surface Mount Package Saves Board Space
? BV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
BSS84LT1G Applications
Load Switching
Inverters
Rectifiers
Motor drives
DC choppers
