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This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
- Manufacturer: ON Semiconductor
- NO: 598-BSS84
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2300
- Description: This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 10Ohm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -50V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | -130mA |
| Number of Elements | 1 |
| Voltage | 50V |
| Power Dissipation-Max | 360mW Ta |
| Element Configuration | Single |
| Current | 13A |
| Power Dissipation | 360mW |
| Turn On Delay Time | 2.5 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 73pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 130mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 5V |
| Rise Time | 6.3ns |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6.3 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 130mA |
| Threshold Voltage | -1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -50V |
| Dual Supply Voltage | -50V |
| Input Capacitance | 73pF |
| Drain to Source Resistance | 10Ohm |
| Rds On Max | 10 Ω |
| Nominal Vgs | -1.7 V |
| Height | 930μm |
| Length | 2.92mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
